A new physical-based compact model of floating-gate EEPROM cells

Journal of Non-Crystalline Solids - Tập 280 - Trang 122-126 - 2001
R Bouchakour1, N Harabech1,2, P Canet1, J.M Mirabel3, Ph Boivin3, O Pizzuto3
1Laboratoire Matériaux et Micro-électronique de Provence, UMR CNRS 6137, Institut Charles Fabry, Université de Provence, IMT Technopôle de Château Gombert, 13451 Marseille cedex 20, France
2ENST-Paris, Département COMELEC, URA CNRS 820, 46 Rue Barrault, 75634 Paris cedex 13, France
3ST Microelectronics, ZI de Rousset BP 2, 13106 Rousset, France

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Thông tin xuất bản

Journal of Non-Crystalline Solids

Tập 280

122-126

Thông tin tác giả