A charge-sheet model of the MOSFET

Solid-State Electronics - Tập 21 - Trang 345-355 - 1978
J.R. Brews1
1Bell Laboratories, Murray Hill, NJ 07974, U.S.A.

Tài liệu tham khảo

Heydemann, 1972, L'Onde Electronique, 52, 185 Vandorpe, 1972, Solid-St. Electron., 15, 547, 10.1016/0038-1101(72)90156-6 Kennedy, 1973, IBM J. Res. and Develop., 17, 2, 10.1147/rd.171.0002 Guerst, 1966, Solid-St. Electron., 9, 129, 10.1016/0038-1101(66)90084-0 Loeb, 1968, Electron. Lett., 4, 352, 10.1049/el:19680277 Armstrong, 1969, Electron. Lett, 5, 406, 10.1049/el:19690307 Pao, 1966, Solid-St. Electron., 9, 927, 10.1016/0038-1101(66)90068-2 Grove, 1967 Cobbold, 1970 Sze, 1969 Sah, 1966, IEEE Trans. Electron Dev., ED-13, 393, 10.1109/T-ED.1966.15702 Ihantola, 1964, Solid-St. Electron., 7, 423, 10.1016/0038-1101(64)90039-5 D. Kahng, Bell Laboratories Memorandum dated Jan. 16, 1961 (unpublished). Copies are available from D. Kahng Lindner, 1962, Bell Syst. Tech. J., 41, 803, 10.1002/j.1538-7305.1962.tb00477.x Barron, 1972, Solid-St. Electron., 15, 293, 10.1016/0038-1101(72)90084-6 Swanson, 1972, IEEE J. of Solid-St. Circuits, SC-7, 146, 10.1109/JSSC.1972.1050260 Troutman, 1973, IEEE Trans. Circuit Theory, CT-20, 659, 10.1109/TCT.1973.1083759 de la Moneda, 1973, IEEE Trans. Circuit Theory, CT-20, 666, 10.1109/TCT.1973.1083760