A new gate current model accounting for a non-Maxwellian electron energy distribution function
Tóm tắt
We report on a new formulation to describe hot electron injection through gate dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function. We use the first three even moments of the Boltzmann equation n, T/sub n/, and /spl beta//sub n/ found by the solution of a six moments transport model to describe the shape of the distribution function. Excellent agreement with results from rigorous Monte Carlo simulations and measurements is achieved.
Từ khóa
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #MicroelectronicsTài liệu tham khảo
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