A new SP (simultaneous polishing) model for copper CMP process

T. Ohta1, K. Suzuki1
1Semiconductor Leading Edge Technologies, Inc., Yokohama, Kanagawa, Japan

Tóm tắt

For the copper damascene process, dummy fill is used to improve over-polishing problems such as dishing and erosion. Dummy placement based on design rules is ordinary used, but to improve the efficiency of the dummy fill, model-based design is necessary So, we have developed a new SP (simultaneous, polishing) model for Cu-CMP and developed a dummy pattern design system to utilize the model. Using the model, simulation results of dishing and erosion well agree with experiments within 10% errors, and calculation time is fast enough for LSI design. The system we develop can be utilized to design dummy placement practically.

Từ khóa

#Copper #Stress #Equations #Accuracy #Testing #Electronic design automation and methodology #Electronic mail #Frequency #Convolution

Tài liệu tham khảo

thgbawa, 1999, CMP Symposium kim, 1997, Proc SISPAD, 69 nguyen, 0, Dig of IEDM 2000 owna, 0, Digest of IITC-98, 67 ohta, 0, SISPAD'99, 195