A design and fabrication of the receiver one-chip MMIC for L-band

This paper describes a design and fabrication of one-chip receiver MMIC for L-band applications. The LNA, double balanced mixer, LO balun, RF balun, IF amplifier and a bias circuit are integrated a chip. Each balun operates active and composed of MESFETs. The new applied bias circuit is able to compensate the variation of the threshold voltage caused by the process variation, temperature changes, etc. The mixer achieves the conversion losses of -14 dB, IP3 of 4 dBm, and port-to-port isolation over 25 dB. The designed chip is fabricated by the ETRI 0.5 /spl mu/m GaAs MESFET processes. The chip size is 1.4 mm/spl times/1.4 mm.