A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

IEEE Transactions on Nuclear Science - Tập 47 Số 6 - Trang 2521-2527 - 2000
S. Zhang1, Guofu Niu1, John D. Cressler1, S.J. Mathew2,3, Usha Gogineni1,4, S.D. Clark5, P.J. Zampardi6,7, R.L. Pierson7
1Alabama Microelectronics Science and Technology Center, Electrical and Computer Engineering Department, Aubum University, AL, USA
2Alabama Microelectronics Science and Technology Center, Electrical and Computer Engineering Department, Aubum University, Boise, AL, USA
3Micron Technology Inc., Boise, ID, USA
4IBM Microelectronics, Essex Junction, VT, USA
5Naval Surface Warfare Center, Crane, IN (USA)
6Conexant Systems, Inc., Newbury Park, CA, USA
7Rockwell Science Center, Inc., Thousand Oaks, CA, USA

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