A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300/spl deg/C)
SENSORS, 2002 IEEE - Tập 2 - Trang 1401-1406 vol.2
Tóm tắt
The design of a 5 V fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.
Từ khóa
#Hall effect devices #Temperature sensors #Magnetic sensors #Doping #Magnetic field measurement #Low-frequency noise #Voltage #Geometry #Thin film sensors #SwitchesTài liệu tham khảo
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