A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe

Journal of Electronic Materials - Tập 38 Số 8 - Trang 1698-1706 - 2009
Danilo D’Orsogna1, P. Lamarre2,3, E. Bellotti1, Paul E. Barbone4, F. T. Smith3, C. Fulk2, P. LoVecchio2, M. B. Reine2, S. P. Tobin2, J. K. Markunas5
1Department of Electrical and Computer Engineering, Boston University, Boston, USA
2BAE Systems, Lexington, USA
3Photronix Inc., Burlington, USA
4Department of Mechanical Engineering, Boston University, Boston, USA
5U.S. Army RDECOM CERDEC NVESD, Ft. Belvoir, USA

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