A Facile Method for Improving Detectivity of Graphene/p‐Type Silicon Heterojunction Photodetector

Laser and Photonics Reviews - Tập 15 Số 8 - 2021
Tae Jin Yoo1, Soyoung Kim1, Min Gyu Kwon2, Cihyun Kim2, Kyoung Eun Chang2, Hyeon Jun Hwang1, Byoung Hun Lee1
1Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang, Gyeongbuk, 37673 Republic of Korea
2School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea

Tóm tắt

AbstractSimultaneous optimization of detectivity and dark current is successfully achieved by modulating the Schottky barrier height of a graphene/p‐type silicon photodetector from 0.42 to 0.68 eV by doping graphene with polyethyleneimine (PEI). At a barrier height modulation of 0.26 eV, the dark current is reduced by three orders of magnitude from 980 nA to 219 pA, and the detectivity is improved by 529% at 850 nm when compared to undoped graphene/p‐type silicon photodetectors. Such a significant performance enhancement confirms that the chemical doping of graphene before device fabrication is a simple yet highly efficient approach to improve the detectivity of heterojunction photodetectors.

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Laser and Photonics Reviews

Tập 15 Số 8

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