A 4.2-ps ECL ring-oscillator in a 285-GHz fmax SiGe technology
Tóm tắt
This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for /spl sim/250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses 0.12 × 2 μm2 emitter size SiGe n-p-n transistors with a room temperature fT of 207 GHz and fmax (unilateral gain extrapolation) of 285 GHz. The ring oscillator was studied as a function of various device and circuit parameters and it was found that minimum delay is more dependent on the parasitic resistance and capacitance in the n-p-n device than on pure transit time across the device.
Từ khóa
#Silicon germanium #Germanium silicon alloys #Ring oscillators #Circuits #Heterojunction bipolar transistors #Temperature #Delay effects #Costs #CMOS technology #Silicon on insulator technologyTài liệu tham khảo
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