A 4.2-ps ECL ring-oscillator in a 285-GHz fmax SiGe technology

IEEE Electron Device Letters - Tập 23 Số 9 - Trang 541-543 - 2002
B. Jagannathan1, M. Meghelli2, A.V. Rylyakov2, R.A. Groves1, A.K. Chinthakindi1, C.M. Schnabel1, D.A. Ahlgren1, G.G. Freeman1, K.J. Stein1, S. Subbanna1
1IBM Microelectronics, Hopewell Junction, NY, USA
2IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

Tóm tắt

This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for /spl sim/250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses 0.12 × 2 μm2 emitter size SiGe n-p-n transistors with a room temperature fT of 207 GHz and fmax (unilateral gain extrapolation) of 285 GHz. The ring oscillator was studied as a function of various device and circuit parameters and it was found that minimum delay is more dependent on the parasitic resistance and capacitance in the n-p-n device than on pure transit time across the device.

Từ khóa

#Silicon germanium #Germanium silicon alloys #Ring oscillators #Circuits #Heterojunction bipolar transistors #Temperature #Delay effects #Costs #CMOS technology #Silicon on insulator technology

Tài liệu tham khảo

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