A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration

Po-Yo Chen1, Yu-Lung Tang2, Huei Wang1, Yu-Chi Wang2, Pane-Chane Chao2, Chung-Hsu Chen2
1Department of Electrical Engineering and Graduated Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan
2Air Force Aeronautical and Technical School, Taiwan

Tóm tắt

This paper reports the development of a Q-band (33-50 GHz) triple-push VCO using GaAs heterojunction bipolar transistor (HBT) MMIC technology. The circuit adopts cascode configuration of HBTs in order to increase the negative resistance at high frequency and thus to obtain a higher oscillation frequency. Based on the measured results, MMIC VCO achieves a tuning frequency range of 39 to 46 GHz.

Từ khóa

#MMICs #Heterojunction bipolar transistors #Voltage-controlled oscillators #Frequency #Tuning #Gallium arsenide #Circuit optimization #Resistors #Inductors #Electrical resistance measurement

Tài liệu tham khảo

10.1109/GAAS.1998.722684 10.1109/75.846927 10.1109/4.953475 10.1109/75.763244 kwon, 1994, A 100-GHz monolithic cascode InAlAs/InGa As HEMT oscillator, IEEE Microwave and Guided Wave Letter, 4 10.1109/MWSYM.1999.779413 smith, 0, 25-42GHz GaAs hetero-junction bipolar transistor low noise push-push VCO's, 1989 IEEE MTT-S International Microwave Symposium Digest, 78