A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
60th DRC. Conference Digest Device Research Conference - Trang 139-140
Tóm tắt
We have varied growth parameters including group III and V growth rates, Sb flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well lasers. We have found that it is possible to maintain high photoluminescence intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux and cracking temperature, In incorporation up to 50% becomes possible. To our knowledge, this is the highest In incorporation on GaAs reported without relaxation of the crystal.
Từ khóa
#Gallium arsenide #Optical waveguides #Waveguide lasers #Pump lasers #Stimulated emission #Quantum well lasers #Molecular beam epitaxial growth #Substrates #Optical pumping #Semiconductor optical amplifiersTài liệu tham khảo
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