Homo-epitaxial growth on misoriented GaN substrates by MOCVD
Tóm tắt
The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the
$$\left[ {10\bar 10} \right]$$
direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact
$$\left( {000\bar 1} \right)$$
surface. The features still found on the 4° misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.
Tài liệu tham khảo
M. Seelmann-Eggebert, J.L. Weyher, H. Obloh, H. Zimmermann, A. Rar, and S. Porowski, Appl. Phys. Lett 71 (1997) 2635.
F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, and J.W. Steeds, Appl.Phys.Lett. 69 (1996) 337.
J.L. Rouvière, M. Arlery, R. Niebuhr, K.H. Bachem, and O. Briot, Materals Science and Engineering B43 (1997) 161.
J.L. Weyher, P.D. Brown, A.R.A. Zauner, S. Müller, C.B. Boothroyd, D.T. Foord, P.R. Hageman, C.J. Humpreys, P.K. Larsen, I. Grzegory, and S. Porowski, J. Crystal Growth 204 (1999) 419.
P.D. Brown, J.L. Weyher, C.B. Boothroyd, D.T. Foord, A.R.A. Zauner, P.R. Larsen Hageman, P.K.M. Bockowski, and C.J. Humphreys. XI MSM Conf. proceedings, 1999, in press.
J.L. Weyher, S. Müller, I. Grzegory, and S. Porowski, J. Crystal Growth 182 (1997) 17.
M. Schauler, F. Eberhard, C. Kirchner, V. Schwegler, A. Pelzmann, M. Kamp, K.J. Ebeling, F. Bertram, T. Riemann, J. Christen, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 74 (1999) 1123.
W.J.P. van Enckevort, G. Janssen, W. Vollenberg, and L.J. Giling, J. Crystal Growth 148 (1995) 365.
S. Porowski Mater. Science Eng. B44 (1997) 407.
L.T. Romano and T.H. Myers, Appl. Phys. Lett. 71 (1997) 3486.
G. Nowak, K. Pakula, I. Grzegory, J.L. Weyher, and S. Porowski, Phys. Stat. Sol. (in press).
B. Van der Hoek, J.P. Van der Eerden, and P. Bennema, J. Crystal Growth 56 (1982) 108.