Submicron enhancement-mode AlGaN/GaN HEMTs
60th DRC. Conference Digest Device Research Conference - Trang 23-24
Tóm tắt
Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open potential applications for mixed-signal ICs with a high dynamic range.
Từ khóa
#Aluminum gallium nitride #Gallium nitride #HEMTs #MODFETs #Threshold voltage #Radio frequency #Schottky diodes #Moon #Laboratories #Microwave devicesTài liệu tham khảo
moon, 2001, Recessed gate AIGaN/GaN power HEMTs, Proc Int Symp Compound Semiconductors
kumar, 2001, High performance 0.15 µm recessed gate AIGaN/GaN HEMT on Sappahire, IEDM Technical Digest