Atomistic Processes in the Early Stages of Thin-Film Growth

American Association for the Advancement of Science (AAAS) - Tập 276 Số 5311 - Trang 377-383 - 1997
Shengbai Zhang1, M. G. Lagally1
1Z. Y. Zhang is a research staff member in the Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6032, USA.. M. G. Lagally is the E.W. Mueller Professor in the Departments of Materials Science and Engineering and Physics, University of Wisconsin, Madison, WI 53706, USA.

Tóm tắt

Growth of thin films from atoms deposited from the gas phase is intrinsically a nonequilibrium phenomenon governed by a competition between kinetics and thermodynamics. Precise control of the growth and thus of the properties of deposited films becomes possible only after an understanding of this competition is achieved. Here, the atomic nature of the most important kinetic mechanisms of film growth is explored. These mechanisms include adatom diffusion on terraces, along steps, and around island corners; nucleation and dynamics of the stable nucleus; atom attachment to and detachment from terraces and islands; and interlayer mass transport. Ways to manipulate the growth kinetics in order to select a desired growth mode are briefly addressed.

Từ khóa


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We would like to thank F. Wu X. Chen Z.-P. Shi A. K. Swan M. Hohage Th. Michely G. Comsa H. Metiu M. B. Webb and J. F. Wendelken for their contributions and help. Supported by Oak Ridge National Laboratory which is managed by Lockheed Martin Energy Research Corp. for the Department of Energy under contract DE-AC05-84OR21400 by NSF (grants DMR91-21074 and DMR93-04912) by the Office of Naval Research and by the Air Force Office of Scientific Research.