Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Solid-State Electronics - Tập 140 - Trang 12-17 - 2018
Zin-Sig Kim1, Hyung-Seok Lee1, Jeho Na1, Sung-Bum Bae1, Eunsoo Nam1, Jong-Won Lim1
1ICT Materials & Components & Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Republic of Korea

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