Oxygen vacancies and donor impurities in β-Ga2O3

Applied Physics Letters - Tập 97 Số 14 - 2010
Joel B. Varley1, J. R. Weber1, Anderson Janotti2, Chris G. Van de Walle2
1University of California 1 Department of Physics, , Santa Barbara, California 93106-9530, USA
2University of California 2 Department of Materials, , Santa Barbara, California 93106-5050, USA

Tóm tắt

Using hybrid functionals we have investigated the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3. We find that oxygen vacancies are deep donors, and thus cannot explain the unintentional n-type conductivity. Instead, we attribute the conductivity to common background impurities such as silicon and hydrogen. Monatomic hydrogen has low formation energies and acts as a shallow donor in both interstitial and substitutional configurations. We also explore other dopants, where substitutional forms of Si, Ge, Sn, F, and Cl are shown to behave as shallow donors.

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Applied Physics Letters

Tập 97 Số 14

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