Donor−acceptor pair luminescence in compensated Si for solar cells

Journal of Applied Physics - Tập 110 Số 4 - 2011
Michio Tajima1, Takaaki Iwai1, Hiroyuki Toyota1, S. Binetti2, Daniel Macdonald3
1Institute of Space and Astronautical Science/JAXA 1 , Sagamihara 252-5210, Japan
2Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), Department of Material Science, University of Milano-Bicocca 2 , via Cozzi 53, 20125 Milano, Italy
3School of Engineering, The Australian National University 3 , Canberra, ACT 0200, Australia

Tóm tắt

A broad band with a fine structure on the higher energy side has been commonly observed in photoluminescence at 4.2 K from compensated Si for solar cells involving P donors and B acceptors on the order of 1016 cm−3. We calculated the theoretical spectrum of donor−acceptor (DA) pair luminescence from the density distribution of pairs as a function of the transition energy of respective pairs with separations ranging from 1.9 to 3.3 nm. A close agreement was obtained between the observed spectral structure and the theoretical curve using the generally accepted P donor and B acceptor ionization energies, where a systematic deviation was explained by the Van der Waals interaction between shallow P donors and B acceptors. This allows us to conclude that the band with the fine structure is due to the P-donor−B-acceptor pair recombination. This identification was confirmed by the observation of As-donor−B-acceptor pair luminescence in an As-doped sample. The present findings indicate that P and B impurities with concentrations on the order of 1016 cm−3 are unlikely to form complexes and that their ionization energies are not changed from those in the low concentration range.

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Journal of Applied Physics

Tập 110 Số 4

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