Interdiffusion of CdS/CdTe thin films: Modeling x-ray diffraction line profiles

Journal of Applied Physics - Tập 89 Số 2 - Trang 988-994 - 2001
Brian E. McCandless1, Michael G. Engelmann2, Robert W. Birkmire1
1Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716
2TREX Enterprises, 590 Lipoa Parkway, Suite 222, Kihei, Maui, Hawaii 96763

Tóm tắt

A method for analyzing the diffusion process for CdS into CdTe thin films using x-ray diffraction is presented, allowing both bulk and grain boundary diffusion coefficients to be estimated. The equilibrium phase diagram for the CdTe1−xSx and CdS1−yTey alloy system was determined for temperatures from 625 °C to 415 °C. Measured diffraction line profiles for time-progressive diffusion of CdS into CdTe films resulting from thermal treatment at 440° were modeled using bulk and grain boundary diffusion coefficients of 1.25×10−13 cm2/s and 1.5×10−8 cm2/s, respectively. Modeling diffraction line profiles of samples treated at temperatures from 380 °C to 480 °C yielded Arrhenius activation energies for bulk and grain boundary diffusion processes of 2.8 eV and 2.0 eV, respectively. The bulk diffusion coefficients obtained from thin film structures were comparable to those obtained by Auger depth profiles for CdS/CdTe couples using CdTe single crystals.

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Thông tin xuất bản

Journal of Applied Physics

Tập 89 Số 2

988-994

Thông tin tác giả