A lumped, large-signal dynamic model of the mosfet for RF circuit simulation
ICCSC'02. 1st IEEE International Conference on Circuits and Systems for Communications. Proceedings (IEEE Cat. No.02EX605) - Trang 312-315
Tóm tắt
We present a lumped, large-signal dynamic model of the MOS transistor that is derived from a partial differential equation model of the transistor. The new model is a ladder network in which each series arm is a nonlinear conductance and each shunt arm a nonlinear charge "store." The network variables are localized surface potentials, surface charge densities, and currents. We test the model against the PDE model in RF circuit simulation and the two sets of results agree well even for a small number of sections (4) of the ladder.
Từ khóa
#MOSFET circuits #Radio frequency #Circuit simulation #Partial differential equations #Circuit testing #Differential equations #Computational modeling #Application specific integrated circuitsTài liệu tham khảo
xin-yu, 0, Periodic steady state solution of PDE-ODE system for RF circuit simulation
10.1109/ISCAS.2002.1010454
lee, 1998, The Design of CMOS Radio-Frequency Integrated Circuits
10.1016/0038-1101(78)90264-2
10.1109/ICASIC.2001.982650
tsividis, 1999, Operation and Modeling of the MOSFET