Manipulation of Adsorbed Atoms and Creation of New Structures on Room-Temperature Surfaces with a Scanning Tunneling Microscope

American Association for the Advancement of Science (AAAS) - Tập 251 Số 4998 - Trang 1206-1210 - 1991
L. J. Whitman1, Joseph A. Stroscio1, Robert A. Dragoset1, R. J. Celotta1
1Physicists in the Electron and Optical Physics Division at the National Institute of Standards and Technology, Gaithersburg, MD 20899

Tóm tắt

A general method of manipulating adsorbed atoms and molecules on room-temperature surfaces with the use of a scanning tunneling microscope is described. By applying an appropriate voltage pulse between the sample and probe tip, adsorbed atoms can be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the voltage pulse because of the local potential energy gradient arising from the interaction of the adsorbate dipole moment with the electric field gradient at the surface. Depending upon the surface and pulse parameters, cesium (Cs) structures from one nanometer to a few tens of nanometers across have been created in this way on the (110) surfaces of gallium arsenide (GaAs) and indium antimonide (InSb), including structures that do not naturally occur.

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Tài liệu tham khảo

BECKER, R.S., ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE, NATURE 325: 419 (1987).

10.1038/344524a0

FEENSTRA, R.M., TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5: 923 (1987).

FEENSTRA, R.M., ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE, PHYSICAL REVIEW LETTERS 58: 1192 (1987).

FIRST, P.N., STRUCTURE OF CS ON GAAS(110) AS DETERMINED BY SCANNING TUNNELING MICROSCOPY, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 7: 2868 (1989).

FIRST, P.N., METALLICITY AND GAP STATES IN TUNNELING TO FE CLUSTERS ON GAAS(110), PHYSICAL REVIEW LETTERS 63: 1416 (1989).

FOSTER, J.S., MOLECULAR MANIPULATION USING A TUNNELLING MICROSCOPE, NATURE 331: 324 (1988).

HESKETT, D, CORRELATION OF ALKALI METAL-INDUCED WORK FUNCTION CHANGES ON SEMICONDUCTOR AND METAL-SURFACES, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 7: 915 (1989).

KLIMENKO, E.V., FIZIKA TVERDOGO TELA 13: 33 (1971).

KLIMENKO, E.V., ADSORPTION OF STRONTIUM ON (110) FACE OF TUNGSTEN, FIZIKA TVERDOGO TELA 15: 3273 (1973).

KRAUSS, M, CS CLUSTER BINDING TO A GAAS SURFACE, JOURNAL OF CHEMICAL PHYSICS 93: 8915 (1990).

MAMIN, H.J., ATOMIC EMISSION FROM A GOLD SCANNING-TUNNELING-MICROSCOPE TIP, PHYSICAL REVIEW LETTERS 65: 2418 (1990).

SHEDD, G.M., NANOTECHNOLOGY 1: 6 (1990).

TSONG, T.T., DIRECT OBSERVATION OF DIRECTIONAL WALK OF SINGLE ADATOMS AND ADATOM POLARIZABILITY, PHYSICAL REVIEW B 12: 1343 (1975).

WANG, S.C., FIELD AND TEMPERATURE-DEPENDENCE OF THE DIRECTIONAL WALK OF SINGLE ADSORBED W-ATOMS ON THE W(110) PLANE, PHYSICAL REVIEW B 26: 6470 (1982).

Whitman, L. J., Physical Review Letters 66: 1338 (1991).

WHITMAN, L.J., SCANNING-TUNNELING-MICROSCOPY STUDY OF INSB(110), PHYSICAL REVIEW B 42: 7288 (1990).

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American Association for the Advancement of Science (AAAS)

Tập 251 Số 4998

1206-1210

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