Electron transport in nanoscale bipolar transistors
Proceedings of the 2nd IEEE Conference on Nanotechnology - Trang 103-106
Tóm tắt
As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models, and solves these self-consistently with Poisson's equation. The resulting data demonstrate the limitations of the drift-diffusion and the energy transport models. Directions for future work are proposed.
Từ khóa
#Bipolar transistors #Poisson equations #Electron emission #MOSFETs #Physics #Boltzmann equation #Distribution functions #Design automation #Art #Gallium arsenideTài liệu tham khảo
0, User's Manual for DESSIS ISE TCAD Release 10 0
10.1016/S0038-1101(02)00130-2
10.1109/16.223707
tang, 1984, extension of the scharfetter—gummel algorithm to the energy balance equation, IEEE Transactions on Electron Devices, 31, 1912, 10.1109/T-ED.1984.21813
10.1109/55.144940
0, MEDICI User s Manual Version 4 1
10.1016/0038-1101(94)90004-3
10.1063/1.1405000
1998, S-DEMON 2 0 user's manual
0, NanoMOS 2 0 see
10.1063/1.363143
10.1109/16.960388