Photoluminescence characterization of ultrahigh purity silicon
Tóm tắt
When photoluminescence (PL) measurements on silicon are calibrated against an established measurement technique, they become a powerful characterization tool capable of quantitatively identifying impurities. PL is particularly useful for characterizing ultrahigh purity silicon, due to its ability to determine the concentrations of the shallow impurities down to ≈5 × 1010 atoms-cm−3. We have utilized variable temperature Halleffect measurements to calibrate PL measurements made at 4.2 K on ultrahigh purity float-zone silicon, establishing calibration relationships to determine boron, phosphorus, and gallium concentrations. The concentrations range from the low −1012 atoms-cm-3 for phosphorus and boron, to 1 × 1014 atoms-cm−3 for boron and 1 × 1016 atoms-cm−3 for phosphorus. The preliminary gallium calibration concentration range is from the high-1012 to the mid-1010 atoms-cm3. Previous PL calibrations based on variable temperature Hall-effect measurements have not produced the theoretically expected proportionality between the impurity concentration and the PL line intensities of the transverse-optical phonon-assisted replicas of the impurity bound exciton normalized to the PL line intensity of the free-exciton. By performing the PL measurements at a fixed free-exciton density, we have achieved the theoretically expected proportionality. The experimental methods and an overview of the theory concerning fixed free-exciton con-ditions, the associated Hall-effect analyses, and the PL calibrations are presented.
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