SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

W. Kim, A.E. Botchkarev, A. Salvador, G. Popovici, H. Tang, and H. Morkoç, J. Appl. Phys. 82, 219 (1997).

C.Y. Hwang, Y. Li, M.J. Schurman, W.E. Mayo, Y. Lu, and R.A. Stall, Mat. Res. Soc. Symp. Proc. 395 (Warrendale, PA: MRS, 1996), p. 521.

A.Y. Polyakov, M. Shin, D.W. Greve, M. Skowronski, and R.G. Wilson, MRS Internet J. Nitride Semicond. Res. 1 (1996).

C.G. Van de Walle, C. Stampfl, and J. Neugebauer, J. Cryst. Growth 189/190, 505 (1998).

M. Topf, W. Kriegseis, W. Burkhardt, I. Dirnstorfer, D. Meister, and B.K. Meyer, Mater. Sci. Forum; 264–268, 1323 (1998).

C. Stampfl and C.G. Van de Walle, Appl. Phys. Lett. 72, 459 (1998).

W. Seifert, R. Franzheld, E. Butter, H. Sobotta, and V. Riede, Cryst. Res. & Technol. 18, 383 (1983).

B.-C. Chung and M. Gershenzon, J. Appl. Phys. 72, 651 (1992).

C. Wetzel, H. Amano, I. Akasaki, T. Suski, J.W. Ager, E.R. Weber, E.E. Haller, and B.K. Meyer, Mat. Res. Soc. Symp. Proc. 482 (Warrendale, PA: MRS, 1998), p. 489.

M.D. McCluskey, N.M. Johnson, C.G. Van de Walle, D.P. Bour, and M. Kneissl, Phys. Rev. Lett. 80, 4008 (1998).

P. Boguslawski and J. Bernholc, Phys. Rev. B 56, 9496 (1997).

T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980).

R. Zhang and T.F. Kuech, Mat. Res. Soc. Symp. Proc. 482 (Warrendale, PA: MRS, 1998), p. 709.

C.-Y. Hwang, M.J. Schurman, W.E. Mayo, Y.-C. Lu, R.A. Stall, and T. Salagajj, J. Electron. Mater. 26, 243 (1997).

J.Z. Li, J.Y. Lin, H.X. Jiang, M. Asif Khan, and Q. Chen, J. Appl. Phys. 82, 1227 (1997).

F. Binet, J.Y. Duboz, E. Rosencher, F. Scholz, and V. Härle, Appl. Phys. Lett. 69, 1202 (1996).

P. De Mierry, O. Ambacher, H. Kratzer, and M. Stutzmann, Phys. Stat. Sol. A 158, 587 (1996).

C. Huang, S. Mitha, J.W. Erickson, R. Clark-Phelps, J. Sheng, and Y. Gao, Mat. Res. Soc. Symp. Proc. 468 (Warrendale, PA: MRS, 1997), p. 281.

A. Ishibashi, H. Takeishi, M. Mannoh, Y. Yabuuchi, and Y. Ban, J. Electron. Mater. 25, 799 (1996).

A. Hanser, C. Wolden, W. Perry, T. Zheleva, E. Carlson, P. Hartlieb, and R.F. Davis, Mat. Res. Soc. Symp. Proc. 482 (Warrendale, PA: MRS, 1998), p. 149.

T.F. Kuech, M.A. Tischler, R. Potemski, F. Cardone, and G. Scilla, J. Cryst. Growth 98, 174 (1989).

G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy (San Diego, CA: Academic Press, 1989).

A. Koukitu, N. Takahashi, T. Taki, and H. Seki, Jpn. J. Appl. Phys. 35, L673 (1996);

A. Koukitu, N. Takahashi, and H. Seki, Jpn. J. Appl. Phys. 36, L1136 (1997).

T.F. Kuech, D.J. Wolford, E. Veuhoff, V. Deline, P.M. Mooney, R. Potemski, and J. Bradley, J. Appl. Phys. 62, 632 (1987).

A. Thon and T.F. Kuech, Appl. Phys. Lett. 69, 55 (1996).

J. Han, J.J. Figiel, M.H. Crawford, M. A. Banas, M.E. Bartram, R.M. Biefeld, Y.K. Song, and A.V. Nurmikko, J. Cryst. Growth 195, 291 (1998).

T.G. Mihopoulos, V. Gupta, and K.F. Jensen, J. Cryst. Growth 195, 733 (1998).

F. Nakamura, S. Hashimoto, M. Hara, S. Imanaga, M. Ikeda, and H. Kawai, J. Cryst. Growth 195, 280 (1998).

S. Keller, unpublished (1996).