Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Mitova, 2014, Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications, IEEE Trans Power Electron, 29, 2441, 10.1109/TPEL.2013.2286639 Saito, 2008, A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT, IEEE Electron Device Lett., 29, 8, 10.1109/LED.2007.910796 Altuntas, 2015, Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate, IEEE Electron Device Lett., 36, 303, 10.1109/LED.2015.2404358 Wen, 2017, A Dual-Mode Driver IC with Monolithic Negative Drive-Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT, IEEE Trans Power Electron, 32, 423, 10.1109/TPEL.2016.2537002 Rongming Chu, 2011, 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance, IEEE Electron Device Lett., 32, 632, 10.1109/LED.2011.2118190 Micovic, 2005, GaN enhancement/depletion-mode FET logic for mixed signal applications, Electron. Lett., 41, 1081, 10.1049/el:20052263 Feng, 2010, 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation, IEEE Electron Device Lett, 31, 1386, 10.1109/LED.2010.2072901 Greco, 2018, Review of technology for normally-off HEMTs with p-GaN gate, Mater Sci Semicond Process, 78, 96, 10.1016/j.mssp.2017.09.027 Damilano, 2016, Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication, NANO Lett, 16, 1863, 10.1021/acs.nanolett.5b04949 Ngo, 2020, Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors, Semicond Sci Technol, 36, 024001, 10.1088/1361-6641/abcbd3 Jiang, 2021, Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors, Semicond Sci Technol, 36, 10.1088/1361-6641/abd61b Jiang, 2021, Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions, Semicond Sci Technol, 36, 05LT01, 10.1088/1361-6641/abecab Tajima, 2019, Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge, J Crystal Growth, 509, 129, 10.1016/j.jcrysgro.2018.10.051 Baron, 2009, The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111), J Appl Physics, 105, 033701, 10.1063/1.3063698 Vézian, 2004, Phys Rev B, 69, 10.1103/PhysRevB.69.125329 Li, 2019, Realization of GaN Polar MOS using selective-area regrowth by MBE and its breakdown mechanisms, Jpn J Appl Phys, 58, SCCD15, 10.7567/1347-4065/ab0f1b Brown, 2011, Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth, IEEE Trans Electron Devices, 58, 1063, 10.1109/TED.2011.2105268