Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Journal of Applied Physics - Tập 106 Số 6 - 2009
S. Chandramohan1, A. Kanjilal2, S.N. Sarangi1, Subrata Majumder1, R. Sathyamoorthy3, T. Som1
1Institute of Physics 1 , Sachivalaya Marg, Bhubaneswar 751 005, India
2Forschungszentrum Dresden-Rossendorf 2 Institute of Ion Beam Physics and Materials Research, , 01328 Dresden, Germany
3Kongunadu Arts and Science College 3 Department of Physics, , Coimbatore 641 029, India

Tóm tắt

This paper reports on structural, optical, vibrational, and morphological properties of cobalt-doped CdS thin films, prepared by 90 keV Co+ implantation at room temperature. In this work, we have used cobalt concentration in the range of 0.34–10.8 at. %. Cobalt doping does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. However, with increasing cobalt concentration a decrease in the optical band gap, from 2.39 to 2.26 eV, is observed. This reduction is addressed on the basis of band tailing due to the creation of localized energy states in association with Urbach energy calculations. In addition, implantation gives rise to grain growth and increase in the surface roughness. Size and shape fluctuations of individual CdS grains, at higher fluences, give rise to inhomogeneity in strain. The results are discussed in the light of ion-matter interaction in the keV regime.

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Journal of Applied Physics

Tập 106 Số 6

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