An analysis of PN junctions in piezoelectric semiconductors

Journal of Applied Physics - Tập 122 Số 20 - 2017
Yixun Luo1, Chunli Zhang1,2,3, Weiqiu Chen1,2,3, Jiashi Yang1,4
1Department of Engineering Mechanics, Zhejiang University 1 , Hangzhou, Zhejiang 310027, China
2Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province 3 , Hangzhou 310027, China
3Soft Matter Research Center (SMRC), Zhejiang University 2 , Hangzhou 310027, China
4Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln 4 , Lincoln, Nebraska 68588-0526, USA

Tóm tắt

We present a theoretical study on the equilibrium state of a PN junction, which is created by two piezoelectric semiconductor half spaces doped oppositely, based on the equations of linear piezoelectricity and the conservation of charge for holes and electrons. The nonlinearity associated with the drift currents of electrons and holes, which appears as products of the unknown carrier concentrations and the unknown electric field, is linearized for small carrier concentration perturbations. An analytical solution is rigorously derived, which is able to show the shaping of the PN junction near the interface. The electromechanical fields and concentrations of electrons and holes near the interface of the PN junction, and the forward-bias current-voltage characteristics of the PN junction under different applied stresses, are calculated and discussed. The effects of a few physical parameters on the properties of the PN junction are investigated as well.

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Journal of Applied Physics

Tập 122 Số 20

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