Theory of the gain characteristics of InGaN/AlGaN QD Lasers
Tóm tắt
We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of the strain tensor. The proposed approach is combined with a plane-wave expansion method to calculate the carrier spectrum and wave functions. The many-body gain of a laser containing a periodic array of QDs is calculated using the Padé approximation. We show that band gap reduction and the Coulomb enhancement of the interband transition probability can significantly modify the gain spectrum in InGaN/AlGaN QD lasers.
Tài liệu tham khảo
S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer-Verlag, Berlin, 1997)
F. Widmann, B. Daudin, G. Feuillet, et.al., J. of Appl. Phys,, 83, 7618 (1998)
B. Daudin, F. Widmann, G. Feuillet, et.al., Phys. Rev. B, 56, R7069 (1997)
H. Hirayama, S. Tanaka, P. Ramvall, Y. Aoyagi, Appl. Phys. Lett., 72, 1736 (1998)
J.S. Im, S. Heppel, H. Kollmer, et.al., J. of Grystal Growth, 190, 597 (1998)
Y. Narukawa, Y. Kawakami, M. Funato, et.al., Appl. Phys. Lett., 70, 981 (1997)
M. Grundman, O. Stier, D. Bimberg, Phys. Rev. B, 52, 11969 (1995)
A. Cusack, P. R. Briddon, M. Jaros, Phys. Rev. B, 54, R2300 (1996)
J.R. Downes, D.A. Faux, E.P. O’Reilly, J. Appl. Phys., 81, (10), 6700 (1997)
A.D. Andreev, J.R. Downes, D.A. Faux, E.P. O’Reilly, subm. to J. Appl.Phys.
A.D Andreev, E.P. O’Reilly, to be subm. to Phys.Rev. B.
A.F. Wright, J. Appl. Phys., 82, 2833 (1997)
T.L. Tansley, E.M. Goldys, H. Godlevski, {etet al.}, in GaN and Related Materials, edited by S.J. Pearton (Gordon and Breach Science Publish., New York, 1997), p.268
G.L. Bir, G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1972)
S.L. Chuang, C.S. Chang, Phys. Rev. B, 54, 2491 (1996)
G. Martin, A. Botchkarev, A. Rockett, H. Morcos, Appl. Phys. Lett., 68, 2541 (1996)
T.C. Yeo, T.C. Chong, M.F. Li, J. Appl.Phys., 83, 1429 (1998)
T.C. Chong, Y.C. Yeo, M.F. Li, W.J. Fan, MRS Proc. vol. 482 (1997)
H. Haug, S.W. Koch, Phys. Rev. A, 39, 1887 (1989)
W.W. Chow, S.T. Koch, M. Sargent III, IEEE J. of Quantum Electronics, 26, 1052 (1990)
P. Rees, C. Cooper, P. Blood, et.al., Electron. Lett., 31, 1149 (1995)
A.D. Andreev, in In-plane Semiconductor Lasers: from Ultraviolet to Mid-infrared, SPIE Proc., 3284, 151 (1998)