Donor-acceptor pair luminescence in B and P compensated Si co-doped with Ga

Journal of Applied Physics - Tập 113 Số 24 - 2013
Michio Tajima1,2, Kõji Tanaka1,2, Maxime Forster3, Hiroyuki Toyota1, Atsushi Ogura2
1Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency 1 , 3-1-1 Yoshinodai, Sagamihara 252-5210, Japan
2Meiji University, 1-1-1 Higashimita 2 , Tama, Kawasaki 241-8571, Japan
3APOLLON SOLAR 3 , 66 cours Charlemagne, 69002 Lyon, France

Tóm tắt

The electrical activity of Ga impurities in a high concentration range in B and P highly compensated Si co-doped with Ga for photovoltaic applications has been investigated through the analysis of donor-acceptor pair luminescence. We have identified the fine structure due to the pair luminescence between P-donors and Ga-acceptors based on a comparison with a theoretical spectrum using their generally accepted ionization energies in low concentration ranges in uncompensated Si. The fine structure showed no dependence on dopant concentrations in the P and Ga concentration ranges from 7 × 1016 to 4 × 1017 cm−3 and from 5 × 1016 to 3 × 1017 cm−3, respectively, which leads us to suggest that both P and Ga impurities act as isolated donors and acceptors without noticeable reduction of ionization energies due to high doping.

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Journal of Applied Physics

Tập 113 Số 24

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