Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Wiley - Tập 8 Số 3 - Trang 792-795 - 2011
Takaaki Iwai1,2, Michio Tajima1, Atsushi Ogura2
1Institute of Space and Astronautical Science/Japan Aerospace Exploration Agency, 3‐1‐1 Yoshinodai, Chou‐ku, Sagamihara 229‐5210, Japan
2Meiji University, 1‐1‐1 Higashimita, Tama, Kawasaki 214‐8571, Japan

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AbstractWe report details about the quantitative analysis of B and P impurities in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure of the impurity concentration in the range between 5 × 1010 and 1 × 1015 cm–3 in the standard PL method. We raised the sample temperature to enhance the FE emission, which enabled us to extend the concentration range higher. The sample temperature was accurately determined from the FE‐line shape. We deduced a formula for the determination of the B and P concentrations in the higher range from the BE/FE ratio and the sample temperature (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Wiley

Tập 8 Số 3

792-795

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