Modelling of device structure effects in backside illuminated CMOS compatible photodiodes
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 399-402
Tóm tắt
A backside illuminated CMOS photodiode consisting of an n+ (source implant) emitter and P-substrate base has been numerically simulated in a 1D approximation. The effects of device dimensions (junction depth and photodiode thickness), emitter and base dopant concentrations have been examined in relation to the spectral dependence of the quantum efficiency. The calculations indicate that greater control over the spectral response of the photodiode can be realised for a backside-illuminated photodiode, compared to the normal frontside illuminated structure of current Camera on a CMOS chip technology.
Từ khóa
#Semiconductor device modeling #Photodiodes #CMOS technology #CMOS process #CMOS image sensors #Photodetectors #Numerical simulation #Cameras #Military standards #FabricationTài liệu tham khảo
singh, 1994, Semiconductor Devices An Introduction
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10.1117/12.386565
bermak, 2000, Proc 2000 IEEE Int Symp Circuits and Systems (ISCAS 2000, 293