Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°K

Journal of Applied Physics - Tập 35 Số 10 - Trang 2899-2907 - 1964
John P. Dismukes1, Lars‐Gösta Ekström1, E. F. Steigmeier1, I. Kudman1, D. S. Beers1
1RCA Laboratories, Radio Corporation of America, Princeton, New Jersey

Tóm tắt

The thermal resistivity, Seebeck coefficient, electrical resistivity, and Hall mobility of Ge-Si alloys have been measured throughout the Ge-Si alloy system as functions of impurity concentration in the range 2×1018−4×1020cm−3, and of temperature in the range 300°–1300°K. A qualitative interpretation of these properties is given. For power conversion, boron and phosphorus were found to be useful p-type and n-type impurities, respectively, because of their high solid solubilities. At 1200°K, the maximum values of the dimensionless figure of merit zT were 0.8 for p-type Ge0.15-Si0.85 alloy doped to 2.1×1020cm−3 holes, and 1.0 for n-type Ge0.15-Si0.85 alloy doped to 2.7×1020cm−3 electrons. The maximum over-all efficiency of a stable generator operating between 300°–1200°K, using the best p-type and n-type materials was computed to be 10%.

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Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 35 Số 10

2899-2907

Thông tin tác giả