Strained-Si- and SiGe-on-insulator (strained-SOI and SGOI) MOSFETs for high performance/low power CMOS application
60th DRC. Conference Digest Device Research Conference - Trang 37-40
Tóm tắt
We have proposed and demonstrated high performance strained-SOI and SGOI MOSFETs. It is strongly expected that strained-SOI and SGOI structures and devices based on these virtual substrates can provide new device options to sub-100 nm CMOS technology with high performance/low power consumption.
Từ khóa
#MOSFETs #Silicon germanium #Germanium silicon alloys #Substrates #Electron mobility #Oxidation #Atomic layer deposition #Charge carrier processes #Insulation #Circuit optimizationTài liệu tham khảo
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