Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Nature Communications - Tập 11 Số 1
David Pesquera1, Ekaterina Khestanova2, M. Ghidini1, Sen Zhang1, Aidan P. Rooney3, Francesco Maccherozzi4, Patricia Riego1, S. Farokhipoor5, J. Kim1, Xavier Moya1, M. E. Vickers1, N. A. Stelmashenko1, Sarah J. Haigh3, S. S. Dhesi4, N. D. Mathur1
1Department of Materials Science, University of Cambridge, Cambridge CB3 0FS, UK
2ITMO University, Saint Petersburg 197101, Russia
3School of Materials, University of Manchester, Manchester M13 9PL, UK
4Diamond Light Source, Chilton, Didcot, Oxfordshire OX11 0DE, UK
5Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands

Tóm tắt

AbstractEpitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La0.7Sr0.3MnO3 and an electroactive substrate of ferroelectric 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.

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Tập 11 Số 1

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