High luminous flux mirror-substrate AlGaInP large-area emitters

Recently, high luminous flux light-emitting diodes (LEDs) have gained in interest for commercial applications, such as automotive lighting, dental curing and general illumination. It is necessary to require LEDs to be driven at a higher current to obtain a higher luminous flux. However, the conventional LED sources are typically limited to low flux application due to the high thermal resistance (220/spl deg/C/W), which results from a worse thermal conductivity GaAs substrate and package. An AlGaInP LED with a Au/AuBe/SiO/sub 2//Si mirror substrate (MS) has been successfully fabricated using wafer bonding technique. The high thermal conductivity Si substrate of the MS-LED provides a good heat sink. Thus the bonded MS-LED has a potential for the application of large-area LEDs.