Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
Tóm tắt
Ultra-thin DGSOI transistors are considered as one of the most promising devices for future VLSI. Besides expected improvements in the sub-threshold behavior, a theoretical enhancement of the channel mobility was found by some authors. Here, we apply a quantum-mechanical mobility model, based on an integrated Schrodinger/Poisson solver, to double-gate SOI MOSFETs with a range of silicon slab thickness t/sub Si/ and buried-oxide thickness t/sub box/. The main finding is that the theoretical enhancement of effective mobility and on-current at t/sub Si/ /spl ap/10 nm is bound to comparable thicknesses of buried and front oxides. If t/sub box/ /spl ap/100/spl times/t/sub ox/, as e.g. in the case of SIMOX wafers, the volume-inversion related increase of the mobility completely vanishes.
Từ khóa
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integrationTài liệu tham khảo
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