Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation
Tóm tắt
The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.
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Tài liệu tham khảo
Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).
Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).
Zhu, K. et al. The development of integrated circuits based on two-dimensional materials. Nat. Electron. 4, 775–785 (2021).
Deng, B. et al. Wrinkle-free single-crystal graphene wafer grown on strain-engineered substrates. ACS Nano 11, 12337–12345 (2017).
Chen, T.-A. et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219–223 (2020).
Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).
Chang, C. et al. Recent progress on two-dimensional materials. Acta Phys. Chim. Sin. 37, 2108017 (2021).
Wang, M. et al. Single-crystal, large-area, fold-free monolayer graphene. Nature 596, 519–524 (2021).
Reina, A. et al. Transferring and identification of single- and few-layer graphene on arbitrary substrates. J. Phys. Chem. C. 112, 17741–17744 (2008).
Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).
Pirkle, A. et al. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2. Appl. Phys. Lett. 99, 122108 (2011).
Huang, P. Y. et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts. Nature 469, 389–392 (2011).
Zhu, W. et al. Structure and electronic transport in graphene wrinkles. Nano Lett. 12, 3431–3436 (2012).
Peng, Z. et al. Influence of O2, H2O and airborne hydrocarbons on the properties of selected 2D materials. RSC Adv. 7, 27048–27057 (2017).
Kim, H. H. et al. Clean transfer of wafer-scale graphene via liquid phase removal of polycyclic aromatic hydrocarbons. ACS Nano 9, 4726–4733 (2015).
Zhang, Z. et al. Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes. Nat. Commun. 8, 14560 (2017).
Lin, Y. C. et al. Clean transfer of graphene for isolation and suspension. ACS Nano 5, 2362–2368 (2011).
Wood, J. D. et al. Annealing free, clean graphene transfer using alternative polymer scaffolds. Nanotechnology 26, 055302 (2015).
Chen, M. et al. Large-scale cellulose-assisted transfer of graphene toward industrial applications. Carbon 110, 286–291 (2016).
Li, X. et al. Transfer of large-area graphene films for high-performance transparent conductive electrodes. Nano Lett. 9, 4359–4363 (2009).
Van Ngoc, H. et al. PMMA-etching-free transfer of wafer-scale chemical vapor deposition two-dimensional atomic crystal by a water soluble polyvinyl alcohol polymer method. Sci. Rep. 6, 33096 (2016).
Kim, S. J. et al. Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films. Nano Lett. 15, 3236–3240 (2015).
Hong, J.-Y. et al. A rational strategy for graphene transfer on substrates with rough features. Adv. Mater. 28, 2382–2392 (2016).
Jung, W. et al. Ultraconformal contact transfer of monolayer graphene on metal to various substrates. Adv. Mater. 26, 6394–6400 (2014).
Seo, Y.-M. et al. Defect-free mechanical graphene transfer using n-doping adhesive gel buffer. ACS Nano 15, 11276–11284 (2021).
Bae, S. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 5, 574–578 (2010).
Quellmalz, A. et al. Large-area integration of two-dimensional materials and their heterostructures by wafer bonding. Nat. Commun. 12, 917 (2021).
Kim, J. et al. Layer-resolved graphene transfer via engineered strain layers. Science 342, 833–836 (2013).
Kim, K. S. et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 457, 706–710 (2009).
Banszerus, L. et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Sci. Adv. 1, e1500222 (2015).
Luo, D. et al. Role of graphene in water-assisted oxidation of copper in relation to dry transfer of graphene. Chem. Mater. 29, 4546–4556 (2017).
Kang, J. et al. Efficient transfer of large-area graphene films onto rigid substrates by hot pressing. ACS Nano 6, 5360–5365 (2012).
Wu, S. Polymer Interface and Adhesion 1st edn (Routledge, 1982).
Kim, H. et al. Micropatterning of thin P3HT films via plasma enhanced polymer transfer printing. J. Mater. Chem. 18, 3489–3495 (2008).
Kotsidi, M. et al. Preventing colour fading in artworks with graphene veils. Nat. Nanotechnol. 16, 1004–1010 (2021).
Mannix, A. J. et al. Robotic four-dimensional pixel assembly of van der Waals solids. Nat. Nanotechnol. 17, 361–366 (2022).
Giambra, M. A. et al. Wafer-scale integration of graphene-based photonic devices. ACS nano 15, 3171–3187 (2021).
Lee, J. E. et al. Optical separation of mechanical strain from charge doping in graphene. Nat. Commun. 3, 1024 (2012).
Couto, N. J. G. et al. Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices. Phys. Rev. X 4, 041019 (2014).
Neumann, C. et al. Raman spectroscopy as probe of nanometre-scale strain variations in graphene. Nat. Commun. 6, 8429 (2015).
Novoselov, K. S. et al. Room-temperature quantum Hall effect in graphene. Science 315, 1379–1379 (2007).
Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722–726 (2010).
Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).
Schmitz, M. et al. Fractional quantum Hall effect in CVD-grown graphene. 2D Mater. 7, 041007 (2020).
Pezzini, S. et al. High-quality electrical transport using scalable CVD graphene. 2D Mater. 7, 041003 (2020).
Miyoshi, Y. et al. High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer. Nat. Commun. 9, 1279 (2018).
Luo, F. et al. Graphene thermal emitter with enhanced joule heating and localized light emission in air. ACS Photonics 6, 2117–2125 (2019).
Calizo, I. et al. Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices. Appl. Phys. Lett. 91, 071913 (2007).
Freitag, M. et al. Thermal infrared emission from biased graphene. Nat. Nanotechnol. 5, 497–501 (2010).