Formation of Nanometer-Scale Grooves in Silicon with a Scanning Tunneling Microscope

American Association for the Advancement of Science (AAAS) - Tập 259 Số 5102 - Trang 1724-1726 - 1993
Ataru Kobayashi1, F. Grey1, R. Stanley Williams2, Masakazu Aono1
1Aono Atomcraft Project, ERATO, JRDC, 5-9-9 Tohkohdai, Tsukuba, Ibaraki 300-26, Japan
2Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90024-1569

Tóm tắt

Grooves a few nanometers wide can be formed on a Si(111) surface with a scanning tunneling microscope when the tip is above a critical voltage. This may provide a promising approach to nanodevice fabrication. The dependence of the critical voltage on tunneling current, tip polarity, and tip material was studied with silver, gold, platinum, and tungsten tips. The results are consistent with field emission of positive and negative silicon ions. The variation of critical voltage with current is explained quantitatively by a simple tunneling equation that includes the effect of the contact potential between tip and sample.

Từ khóa


Tài liệu tham khảo

BECKER, R.S., ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE, NATURE 325: 419 (1987).

BECKER, R.S., ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION, PHYSICAL REVIEW LETTERS 65: 1917 (1990).

BOLAND, J.J., THE DRIVING FORCE BEHIND THE CHEMISTRY OF HYDROGEN ON THE SI(111)-7X7 SURFACE, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9: 764 (1991).

BROMMER, K.D., ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION, PHYSICAL REVIEW LETTERS 68: 1355 (1992).

DOBISZ, E.A., SCANNING TUNNELING MICROSCOPE LITHOGRAPHY - A SOLUTION TO ELECTRON-SCATTERING, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9: 3024 (1991).

10.1038/352600a0

GARNAES, J, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 8: 441 (1990).

GOMER, R, POSSIBLE MECHANISMS OF ATOM TRANSFER IN SCANNING TUNNELING MICROSCOPY, IBM JOURNAL OF RESEARCH AND DEVELOPMENT 30: 428 (1986).

Gray D. E. American Institute of Physics Handbook 3 (1972).

LANG, N. D., PHYSICAL REVIEW B 45: 13599 (1992).

LYO, I.W., ELUCIDATION OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) USING SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY, JOURNAL OF PHYSICAL CHEMISTRY 94: 4400 (1990).

10.1126/science.253.5016.173

MAMIN, H.J., ATOMIC EMISSION FROM A GOLD SCANNING-TUNNELING-MICROSCOPE TIP, PHYSICAL REVIEW LETTERS 65: 2418 (1990).

MCBRIDE, S.E., NANOMETER-SCALE FEATURES PRODUCED BY ELECTRIC-FIELD EMISSION, APPLIED PHYSICS LETTERS 59: 3056 (1991).

MISKOVSKY, N.M., FIELD EVAPORATION OF SILICON IN THE FIELD-ION MICROSCOPE AND SCANNING TUNNELING MICROSCOPE CONFIGURATIONS, PHYSICAL REVIEW LETTERS 69: 2427 (1992).

RABE, J.P., FAST NANOSCALE MODIFICATION OF AG(111) USING A SCANNING TUNNELING MICROSCOPE, APPLIED PHYSICS LETTERS 58: 702 (1991).

SCHIMMEL, T, NANOMETER-SIZE SURFACE MODIFICATIONS WITH PRESERVED ATOMIC ORDER GENERATED BY VOLTAGE PULSING, APPLIED PHYSICS LETTERS 58: 1039 (1991).

SIMMONS, J.G., GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM, JOURNAL OF APPLIED PHYSICS 34: 1793 (1963).

10.1126/science.254.5036.1319

TERSOFF, J, THEORY OF THE SCANNING TUNNELING MICROSCOPE, PHYSICAL REVIEW B 31: 805 (1985).

Tsong T. T. Atom-Probe and Field Ion Microscopy (1990).

TSONG, T.T., EFFECTS OF AN ELECTRIC-FIELD IN ATOMIC MANIPULATIONS, PHYSICAL REVIEW B 44: 13703 (1991).

UCHIDA H unpublished data.

Thông tin
Thông tin xuất bản

American Association for the Advancement of Science (AAAS)

Tập 259 Số 5102

1724-1726

Thông tin tác giả