Reliability and performance of a true enhancement mode HIGFET for wireless applications

Microelectronics Reliability - Tập 47 - Trang 1180-1187 - 2007
Craig Gaw1, Thomas Arnold1, Elizabeth Glass1, Robert Martin1
1Freescale Semiconductor, Inc., Wireless & Packaging Systems Laboratory, 2100 East Elliot Road, Tempe, AZ 85284, USA

Tài liệu tham khảo

Glass, 1997, A true enhancement mode single supply power HFET for portable applications, IEEE MTT-S Digest, 1399 Gaw, 2006, Evaluation of SiGe:C HBT intrinsic reliability using conventional and step stress methodologies, Microelectron Reliab, 46, 1272, 10.1016/j.microrel.2006.02.012 Glass, 2000, Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits, IEEE J Solid State Circ, 35, 1276, 10.1109/4.868036 Glass, 2002, High performance single supply power amplifiers for GSM & DCS applications using true enhancement mode FET technology, IEEE MTT-S Digest, 557 Unpublished Freescale, internal report. Craig Gaw, et al., Analysis of 2-temperature EMODE2 accelerated RF life test data, Freescale internal report, 29 November 2001. p. 5.