Band parameters for III–V compound semiconductors and their alloys

Journal of Applied Physics - Tập 89 Số 11 - Trang 5815-5875 - 2001
I. Vurgaftman1, J. R. Meyer1, L. R. Ram‐Mohan2
1Code 5613, Naval Research Laboratory, Washington, DC 20375
2Worcester Polytechnic Institute, Worcester, Massachusetts 01609

Tóm tắt

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Thông tin xuất bản

Journal of Applied Physics

Tập 89 Số 11

5815-5875

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