Relative humidity sensors based on porous polysilicon and porous silicon carbide
SENSORS, 2002 IEEE - Tập 1 - Trang 499-502 vol.1
Tóm tắt
RH sensors have been made using porous polysilicon and porous SiC, both of which can also be made porous by electrochemical anodisation in HF, similarly to single crystal silicon. We show that polysilicon can be incorporated into a humidity sensor enabling a reduction (compared to single-crystal porous Si) of the effect of temperature on humidity measurements. We show that porous SiC can also be incorporated into a humidity sensor and that these sensors are able to withstand being subjected to harsh environments such as a high temperature and high RH chamber, and the outlet of a car exhaust.
Từ khóa
#Silicon carbide #Temperature sensors #Grain boundaries #Hafnium #Temperature measurement #Humidity measurement #Electrodes #Microstructure #Doping #Current distributionTài liệu tham khảo
rittersma, 2002, Recent achievements in miniaturised humidity sensors-a review of transduction techniques, Sensors & Actuators, 96, 196, 10.1016/S0924-4247(01)00788-9
chazalviel, 1997, Surface modification of porous silicon, Properties of Porous Silicon, 59
10.1063/1.321593
10.1109/84.285719
konstantinov, 1996, Porous SiC: material properties, formation mechanism and techniques of material modification, Silicon Carbide and Related Materials 1995 Institute of Physics conference series, 142, 1079
10.1149/1.2100805
connolly, 0, Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications, published in Sensors & Actuators A
10.1063/1.1659780
10.1116/1.581899
10.1016/S0925-4005(96)02019-9
10.1016/0038-1101(73)90113-5
o'halloran, 1999, Capacitive humidity sensor based on porous silicon