Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals

Nature Communications - Tập 7 Số 1
Anh Tuan Duong1, Văn Quảng Nguyễn1, Ganbat Duvjir1, Van Thiet Duong1, Suyong Kwon2, Jae Yong Song2, Jae-Ki Lee3, Ji Eun Lee3, Su-Dong Park3, Taewon Min4, Jaekwang Lee4, Jungdae Kim1, Sunglae Cho1
1Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, 680-749, Republic of Korea
2Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Republic of Korea
3Creative and Fundamental Research Division, Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute (KERI), Changwon, 51543, Republic of Korea
4Department of Physics, Pusan National University, Busan, 605-735, Republic of Korea

Tóm tắt

AbstractRecently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of −2.1 × 1019 cm−3 at 773 K.

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Tập 7 Số 1

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