GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle

Applied Physics Letters - Tập 109 Số 24 - 2016
Pinghui S. Yeh1, Chia‐Chan Chang1, Y.T. Chen1, Da-Wei Lin2, Jung-Shan Liou1, Ching-Chou Wu2, Jian-hua He2, Hao‐Chung Kuo2
1National Taiwan University of Science and Technology 1 Department of Electronic and Computer Engineering and Graduate Institute of Electro-Optical Engineering, , Taipei 106, Taiwan
2National Chiao Tung University 2 Department of Photonics and the Institute of Electro-Optical Engineering, , Hsinchu 300, Taiwan

Tóm tắt

A GaN-based vertical-cavity surface emitting laser (VCSEL) structure featuring a silicon-diffusion-defined current blocking layer for lateral confinement is described. Sub-milliamp threshold currents were achieved for both 3- and 5-μm-aperture VCSELs under continuous-wave operation at room temperature. The vertical cavity was defined by a top dielectric distributed Bragg reflector (DBR) and a bottom epitaxial DBR. The emission spectrum exhibited a single peak at 411.2 nm with a linewidth of 0.4 nm and a side mode suppression ratio of more than 10 dB before device packaging. The full-width-at-half-maximum divergence angle of the 3-μm-aperture VCSEL was as small as approximately 5° which is the lowest number reported. These results implied the 3-μm-aperture VCSEL was in near single-mode operation.

Từ khóa


Tài liệu tham khảo

2008, Appl. Phys. Lett., 92, 141102, 10.1063/1.2908034

2008, Appl. Phys. Express, 1, 121102, 10.1143/APEX.1.121102

2009, Appl. Phys. Express, 2, 052101, 10.1143/APEX.2.052101

2011, Appl. Phys. Express, 4, 072103, 10.1143/APEX.4.072103

2010, Appl. Phys. Lett., 97, 071114, 10.1063/1.3483133

2011, IEEE J. Sel. Top. Quantum Electron., 17, 1594, 10.1109/JSTQE.2011.2116771

2015, Opt. Express, 23, 27145, 10.1364/OE.23.027145

2015, Appl. Phys. Express, 8, 062702, 10.7567/APEX.8.062702

2016, Phys. Status Solidi, A, 213, 1170, 10.1002/pssa.201532759

2015, Appl. Phys. Lett., 107, 091105, 10.1063/1.4929944

2016, Opt. Express, 24, 15546, 10.1364/OE.24.015546

2012, Appl. Phys. Express, 5, 092104, 10.1143/APEX.5.092104

2012, Appl. Phys. Lett., 101, 151113, 10.1063/1.4757873

2012, IEEE J. Quantum Electron., 48, 1107, 10.1109/JQE.2012.2203586

2014, Appl. Phys. Lett., 104, 251116, 10.1063/1.4885384

2015, J. Appl. Phys., 118, 145304, 10.1063/1.4931883

2014, Opt. Express, 22, 411, 10.1364/OE.22.000411

2014, IEEE Photonics Technol. Lett., 26, 2488, 10.1109/LPT.2014.2362297

See https://www.rp-photonics.com/beam_divergence.html/ for more information about beam divergence (last accessed August 15, 2016).

Thông tin
Thông tin xuất bản

Applied Physics Letters

Tập 109 Số 24

Thông tin tác giả