Temperature dependence of Rresistivities of SnO2-based gas sensors exposed to Co, H2, and C3H8 gases
Tóm tắt
The temperature dependence of resistivities of gas sensors made of SnO2, Pd-doped SnO2, and ThO2-doped SnO2 with Pd has been investigated in air containing reducing gases such as CO, H2, and C3H8. The curves for ThO2-doped sensors were significantly influenced by the reducing gases as compared to the sensors without ThO2. From these results, it is found that in Pd-doped SnO2 sensors the dopant plays an important role in oxidizing the surface of SnO2 above 170°C, and that the addition of ThO2 to Pd-doped SnO2 enhances the effects of Pd by removing the adsorbed hydroxyl on SnO2. It is also apparent that the interactions between reducing gases in air and SnO2-based sensors depend upon the oxidizing rates of the surface of SnO2, as well as the amounts of the adsorbed hydroxyl on SnO2.
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