Structural and optical properties of Mn-doped CdS thin films prepared by ion implantation

Journal of Applied Physics - Tập 105 Số 12 - 2009
S. Chandramohan1, A. Kanjilal2, J. Tripathi1, S.N. Sarangi1, R. Sathyamoorthy3, T. Som1
1Institute of Physics 1 , Sachivalaya Marg, Bhubaneswar 751 005, India
2Forschungszentrum Dresden-Rossendorf 2 Institute for Ion Beam Physics and Materials Research, , 01328 Dresden, Germany
3Kongunadu Arts and Science College 3 Department of Physics, , Coimbatore 641 029, India

Tóm tắt

We report on structural and optical properties of Mn-doped CdS thin films prepared by 190 keV Mn-ion implantation at different temperatures. Mn-ion implantation in the fluence range of 1×1013–1×1016 ions cm−2 does not lead to the formation of any secondary phase. However, it induces structural disorder, causing a decrease in the optical band gap. This is addressed on the basis of band tailing due to creation of localized energy states and Urbach energy calculations. Mn-doped samples exhibit a new band in their photoluminescence spectra at 2.22 eV, which originates from the d-d (T41→A61) transition of tetrahedrally coordinated Mn2+ ions.

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Tài liệu tham khảo

2008, J. Nanosci. Nanotechnol., 8, 3272, 10.1166/jnn.2008.145

2007, Appl. Phys. Lett., 90, 262909, 10.1063/1.2753105

2006, Appl. Phys. A, 85, 277, 10.1007/s00339-006-3722-x

1996, Phys. Rev. B, 54, 11555, 10.1103/PhysRevB.54.11555

2006, J. Appl. Phys., 99, 014306, 10.1063/1.2158503

2003, Appl. Phys. Lett., 83, 2214, 10.1063/1.1610789

2008, Phys. Rev. B, 77, 035209, 10.1103/PhysRevB.77.035209

2003, Mater. Sci. Eng. R., 40, 137, 10.1016/S0927-796X(02)00136-5

2006, Appl. Phys. Lett., 89, 161909, 10.1063/1.2363960

JCPDS Card No. 77–2306.

2004, Scr. Mater., 51, 777, 10.1016/j.scriptamat.2004.05.007

2002, Semicond. Sci. Technol., 17, 97, 10.1088/0268-1242/17/2/302

2005, J. Appl. Phys., 98, 023513, 10.1063/1.1948527

2008, Appl. Phys. Lett., 93, 181910, 10.1063/1.3021074

1997, Physica B, 240, 8, 10.1016/S0921-4526(97)00428-6

1990

1997, J. Vac. Sci. Technol. A, 15, 2282, 10.1116/1.580735

1999, J. Appl. Phys., 86, 3171, 10.1063/1.371185

2006, J. Phys. Chem. B, 110, 6699, 10.1021/jp060224p

Furdyna, 1988, Diluted Magnetic Semiconductors, Semiconductors and Semimetals

1988, J. Appl. Phys., 64, R29, 10.1063/1.341700

1962, Phys. Rev., 125, 1865, 10.1103/PhysRev.125.1865

2008, J. Solid State Chem., 181, 1582, 10.1016/j.jssc.2008.05.001

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Journal of Applied Physics

Tập 105 Số 12

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