Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics
Tài liệu tham khảo
Zhang, 2005, Experimental observation of the quantum hall effect and Berry’s phase in graphene, Nature, 438, 201, 10.1038/nature04235
de Heer, 2007, Epitaxial graphene, Solid State Commun, 143, 92, 10.1016/j.ssc.2007.04.023
Geim, 2007, The rise of graphene, Nat Mater, 6, 183, 10.1038/nmat1849
Novoselov, 2004, Electric field effect in atomically thin carbon films, Science, 306, 666, 10.1126/science.1102896
Bolotin, 2008, Temperature-dependent transport in suspended graphene, Phys Rev Lett, 101, 096802, 10.1103/PhysRevLett.101.096802
Wang, 2010, Graphene-based ambipolar RF mixers, IEEE Electron Dev Lett, 31, 906, 10.1109/LED.2010.2052017
Lin, 2011, Wafer-scale graphene integrated circuit, Science, 332, 1294, 10.1126/science.1204428
Wu, 2011, High-frequency, scaled graphene transistors on diamond-like carbon, Nature, 472, 74, 10.1038/nature09979
Liao, 2010, High-speed graphene transistors with a self-aligned nanowire gate, Nature, 467, 305, 10.1038/nature09405
Chen, 2008, Intrinsic and extrinsic performance limits of graphene devices on SiO2, Nat. Nano, 3, 206, 10.1038/nnano.2008.58
Mehr, 2012, Vertical graphene base transistor, IEEE Electron Dev Lett, 33, 691, 10.1109/LED.2012.2189193
Di Lecce, 2013, Graphene base transistors: a simulation study of DC and small-signal operation, IEEE Trans Electron Dev, 60, 3584, 10.1109/TED.2013.2274700
Vaziri, 2013, A graphene-based hot electron transistor, Nano Lett, 13, 1435, 10.1021/nl304305x
Zeng, 2013, Vertical graphene-base hot-electron transistor, Nano Lett, 13, 2370, 10.1021/nl304541s
Di Lecce, 2013, Graphene-base heterojunction transistor: an attractive device for terahertz operation, IEEE Trans Electron Dev, 60, 4263, 10.1109/TED.2013.2285446
Schröter, 2011, Physical and electrical performance limits of high-speed SiGeC HBTs, IEEE Trans Electron Dev, 58, 3687, 10.1109/TED.2011.2163722
Thanh Trung, 2013, Direct growth of graphitic carbon on Si(111), Appl Phys Lett, 102, 013118, 10.1063/1.4773989
Lee, 2014, Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium, Science, 344, 286, 10.1126/science.1252268
Lippert, 2014, Graphene grown on Ge(001) from atomic source, Carbon, 75, 104, 10.1016/j.carbon.2014.03.042
Datta, 2005
Flietner, 1972, The E(k) relation for a two-band scheme of semiconductors and the application to the metal–semiconductor contact, Phys Stat Solidi (b), 54, 201, 10.1002/pssb.2220540119
Sverdlov, 2011
Zhang, 2014, On transport in vertical graphene heterostructures, IEEE Electron Dev Lett, 35, 966, 10.1109/LED.2014.2334052
Stern, 1967, Properties of semiconductor surface inversion layers in the electric quantum limit, Phys Rev, 163, 816, 10.1103/PhysRev.163.816
Moon, 2012, Ultra-low resistance ohmic contacts in graphene field effect transistors, Appl Phys Lett, 100, 203512, 10.1063/1.4719579
Song, 2012, Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition, Sci Rep, 2, 337, 10.1038/srep00337
Klootwijk J, Timmering CE. Merits and limitations of circular TLM structures for contact resistance determination for novel III–V HBTs. In: Proceedings. ICMTS ’04. The International Conference on Microelectronic Test Structures, 2004, 2004, pp. 247–252.
Gupta, 1992, Power gain in feedback amplifiers, a classic revisited, IEEE Trans Microwave Theory Tech, 40, 864, 10.1109/22.137392
Sze, 1981
Venica, 2014, Simulation of DC and RF performance of the graphene base transistor, IEEE Trans Electron Dev, 61, 2570, 10.1109/TED.2014.2325613