The linear piezoresistance effect in p-Ge/sub x/Si/sub 1-x/ alloys
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 3 pp. - 2002
Tóm tắt
Based un three-band spectrum model taking into account main scattering mechanisms the concentration dependencies of linear piezoresistance coefficients in p-Ge/sub x/Si/sub 1-x/ alloys were calculated. It is shown that the piezoresistance dependence upon the alloy composition X has a non-monotonous character.
Từ khóa
#Piezoresistance #Silicon alloys #Impurities #Temperature dependence #Optical scattering #Capacitive sensors #Germanium alloys #Acoustic scattering #Fluctuations #StressTài liệu tham khảo
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