1996, J. Appl. Phys., 79, 7433, 10.1063/1.362677
2001, J. Phys.: Condens. Matter, 13, 7115, 10.1088/0953-8984/13/32/316
2003, Semicond. Sci. Technol., 18, R33, 10.1088/0268-1242/18/4/201
1993, IEEE Trans. Electron Devices, 40, 325, 10.1109/16.182509
2002, Appl. Phys. Lett., 81, 4263, 10.1063/1.1524689
2005, Appl. Phys. Lett., 86, 241108, 10.1063/1.1949730
2009, Appl. Phys. Lett., 94, 013512, 10.1063/1.3064130
2004, IEEE Photon. Technol. Lett., 16, 1718, 10.1109/LPT.2004.829526
2006, IEEE Photon. Technol. Lett., 18, 2508, 10.1109/LPT.2006.887211
2007, J. Electrochem. Soc., 154, H182, 10.1149/1.2426889
2010, Appl. Phys. Lett., 97, 013502, 10.1063/1.3462294
2001, J. Cryst. Growth, 225, 110, 10.1016/S0022-0248(01)00830-2
2004, IEEE Electron Device Lett., 25, 593, 10.1109/LED.2004.833595
2006, Appl. Phys. Lett., 89, 081111, 10.1063/1.2337861
2009, IEEE Photon. Technol. Lett., 21, 1782, 10.1109/LPT.2009.2033713
See supplementary materials at http://dx.doi.org/10.1063/1.3671076 for extra experimental data, supplementary information, and a video.
2010, J. Phys. Chem. C, 114, 6917, 10.1021/jp911210q
2001, Nature, 414, 338, 10.1038/35104607
1991, Nature, 353, 737, 10.1038/353737a0
2010, Chem. Mater., 22, 6656, 10.1021/cm102622x
2011, Nano Lett., 11, 3649, 10.1021/nl2015262
2010, Appl. Phys. Lett., 96, 263104, 10.1063/1.3442913
2011, Jpn. J. Appl. Phys., 50, 06GH06, 10.1143/JJAP.50.06GH06