An adaptive grid approach for the simulation of electromigration induced void migration
Tóm tắt
For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current.
Từ khóa
#Electromigration #Integrated circuit interconnections #Equations #Finite element methods #Shape #Robustness #Chemicals #Electrons #Microelectronics #Circuit simulationTài liệu tham khảo
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10.1063/1.369532
10.1063/1.369656