Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

Applied Physics Letters - Tập 79 Số 12 - Trang 1903-1905 - 2001
V. Adivarahan1, G. Simin1, Г. Тамулайтис1, R. Srinivasan1, Jun Yang1, M. Asif Khan1, M. S. Shur2, R. Gaška2
1Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028
2Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham, New York 12110

Tóm tắt

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm.

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Thông tin xuất bản

Applied Physics Letters

Tập 79 Số 12

1903-1905

Thông tin tác giả